N-channel MOSFET, SOT-223-4 package, featuring 60V drain-source breakdown voltage and 3A continuous drain current. Offers a maximum on-resistance of 110mΩ at a nominal gate-source voltage of 3V. Operates across a wide temperature range of -55°C to 175°C with a maximum power dissipation of 2.1W. Includes fast switching characteristics with turn-on delay of 9.4ns and fall time of 13ns. SMD/SMT termination, RoHS compliant, and supplied in tape and reel packaging.
PackageSOT-223-4
Current Rating3A
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Onsemi NTF3055-100T1G technical specifications.
General
Package/Case
SOT-223-4
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
110mR
Drain-source On Resistance-Max
110MR
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
455pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
2.1W
Rds On Max
110mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.4ns
DC Rated Voltage
60V
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTF3055-100T1G Datasheet
Download the complete datasheet for Onsemi NTF3055-100T1G to view detailed technical specifications.
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