Single P-Channel Power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 5.2A. This component offers a low drain-source on-resistance of 100mΩ, ideal for power switching applications. Housed in a SOT-223-4 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.13W. Key switching characteristics include a turn-on delay of 16ns and a fall time of 24ns.
PackageSOT-223-4
Current Rating-5.2A
PolarityP-CHANNEL
Power3.13W
Quick Jump:
Technical Specifications
Onsemi NTF5P03T3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | -5.2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 100MR |
| Element Configuration | Single |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.75V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | -30V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTF5P03T3G Datasheet
Download the complete datasheet for Onsemi NTF5P03T3G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
