
Single P-Channel Logic Level Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 10A. Offers a low drain-source on-resistance of 44mΩ at a 4.5V gate-source voltage. This SMD/SMT component is housed in a SOT-223-4 package, designed for tape and reel packaging with 4000 units per reel. Key electrical characteristics include a -700mV threshold voltage and a maximum power dissipation of 8.3W.
Onsemi NTF6P02T3G technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | -6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 44MR |
| Dual Supply Voltage | -20V |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.65mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -20V |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTF6P02T3G to view detailed technical specifications.
No datasheet is available for this part.
