The NTGD1100LT1 is a P-channel junction field-effect transistor with a continuous drain current of 3.3A and a DC rated voltage of 20V. It is packaged in a TSOP-6 case and is suitable for surface mount applications. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not RoHS compliant and contains lead.
PackageTSOP
Current Rating3.3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTGD1100LT1 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 80mR |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 8.3W |
| RoHS Compliant | No |
| Type | General Purpose |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTGD1100LT1 Datasheet
Download the complete datasheet for Onsemi NTGD1100LT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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