Dual P-Channel Small Signal MOSFET, featuring 8V Drain-Source Breakdown Voltage and 3.3A Continuous Drain Current. Offers a low 40mΩ Drain-Source On-Resistance-Max and 55mΩ typical. Designed with an On/Off interface and High Side output configuration, this component operates within a -55°C to 150°C temperature range. Housed in a compact SC package, it is RoHS compliant and lead-free.
PackageSC
Current Rating3.3A
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Onsemi NTGD1100LT1G technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 8V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 8V |
| Drain-source On Resistance-Max | 40MR |
| Element Configuration | Dual |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Interface | On/Off |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 3.3A |
| Max Power Dissipation | 830mW |
| Number of Elements | 2 |
| Number of Outputs | 1 |
| Output Configuration | High Side |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGD1100LT1G Datasheet
Download the complete datasheet for Onsemi NTGD1100LT1G to view detailed technical specifications.
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