
Onsemi NTGD3148NT1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 58mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 1.6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.8ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTGD3148NT1G to view detailed technical specifications.
No datasheet is available for this part.
