Quick Jump:
Technical Specifications
Onsemi NTGD3149CT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 387pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGD3149CT1G Datasheet
Download the complete datasheet for Onsemi NTGD3149CT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
