The NTGD3149CT1G is a P-channel N-channel junction field-effect transistor from Onsemi. It features a continuous drain current of 2.4A and a drain to source breakdown voltage of 20V. The device has a drain to source resistance of 110mR and a maximum power dissipation of 900mW. It operates over a temperature range of -55°C to 150°C and is available in a lead-free TSOP package.
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Onsemi NTGD3149CT1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 29.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 387pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 900mW |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.3ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTGD3149CT1G to view detailed technical specifications.
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