The NTGD4161PT1G is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 600mW and a continuous drain current of 1.5A. The device is packaged in a TSOP-6 package and is lead free. It is RoHS compliant and has a maximum drain to source breakdown voltage of -30V.
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Onsemi NTGD4161PT1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Dual |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 281pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.5ns |
| RoHS | Compliant |
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