Dual N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 2.2A continuous drain current. Offers a low 90mΩ drain-source on-resistance at a 10V gate-source voltage. Packaged in a compact TSOP-6 surface-mount case with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Includes fast switching characteristics with 8ns turn-on delay and 8ns fall time.
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Onsemi NTGD4167CT1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 170mR |
| Drain-source On Resistance-Max | 90MR |
| Element Configuration | Dual |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 295pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| Resistance | 90MR |
| RoHS Compliant | Yes |
| Threshold Voltage | 900mV |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8ns |
| Width | 1.7mm |
| RoHS | Compliant |
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