Dual N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 2.2A continuous drain current. Offers a low 90mΩ drain-source on-resistance at a 10V gate-source voltage. Packaged in a compact TSOP-6 surface-mount case with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Includes fast switching characteristics with 8ns turn-on delay and 8ns fall time.
PackageTSOP
Resistance90MR
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Onsemi NTGD4167CT1G technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
170mR
Drain-source On Resistance-Max
90MR
Element Configuration
Dual
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1mm
Input Capacitance
295pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
Resistance
90MR
RoHS Compliant
Yes
Threshold Voltage
900mV
Turn-Off Delay Time
22ns
Turn-On Delay Time
8ns
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTGD4167CT1G Datasheet
Download the complete datasheet for Onsemi NTGD4167CT1G to view detailed technical specifications.
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