The NTGD4169FT1G is an N-channel JFET with a drain to source breakdown voltage of 30V and a continuous drain current of 2.6A. It has a maximum power dissipation of 900mW and a maximum operating temperature of 150°C. The device is packaged in a lead-free TSOP-6 package and is RoHS compliant. It is suitable for surface mount applications and has a low input capacitance of 295pF.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power900mW
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Technical Specifications
Onsemi NTGD4169FT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 295pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -25°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGD4169FT1G Datasheet
Download the complete datasheet for Onsemi NTGD4169FT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.