Single P-Channel Power MOSFET featuring a 20V drain-source breakdown voltage and 33mΩ drain-source resistance. This TSOP-6 packaged component offers a continuous drain current of 3.7A and a maximum power dissipation of 1.25W. It operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 9ns turn-on delay and 9ns fall time. The device is lead-free, RoHS compliant, and supplied in tape and reel packaging.
PackageTSOP
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Onsemi NTGS3136PT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 1.901nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 99ns |
| Turn-On Delay Time | 9ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS3136PT1G Datasheet
Download the complete datasheet for Onsemi NTGS3136PT1G to view detailed technical specifications.
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