The NTGS3441T1 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 500mW and a DC rated voltage of -20V. The transistor features a continuous drain current of 1.65A and a drain to source breakdown voltage of -20V. It is available in a TSOP-6 package and is not RoHS compliant.
PackageTSOP
Current Rating-1A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTGS3441T1 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.65A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Element Configuration | Single |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 480pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 90mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTGS3441T1 Datasheet
Download the complete datasheet for Onsemi NTGS3441T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.