Single P-Channel Power MOSFET featuring a -20V Drain to Source Breakdown Voltage and 90mΩ Drain-source On Resistance. This component offers a continuous drain current of 1.65A and a maximum power dissipation of 2W. Designed for surface-mount applications, it is housed in a compact TSOP package with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Key electrical characteristics include a nominal Vgs of -1.05V and an input capacitance of 480pF, with turn-on and turn-off delay times of 13ns and 27ns respectively. This RoHS compliant device operates within a temperature range of -55°C to 150°C.
PackageTSOP
Current Rating-1A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTGS3441T1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.65A |
| Current Rating | -1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90MR |
| Dual Supply Voltage | -20V |
| Element Configuration | Single |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Nominal Vgs | -1.05V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -1.05V |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS3441T1G Datasheet
Download the complete datasheet for Onsemi NTGS3441T1G to view detailed technical specifications.
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