Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 2.2A. This MOSFET offers a low drain-source on-resistance of 65mΩ at a gate-source voltage of 12V. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C and is packaged in a compact TSOP. Key performance characteristics include a 30ns turn-on delay and a 31ns fall time, with a maximum power dissipation of 500mW.
PackageTSOP
Current Rating-2A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTGS3443T1G technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
2.2A
Current Rating
-2A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
65MR
Element Configuration
Single
Fall Time
31ns
Gate to Source Voltage (Vgs)
12V
Height
0.039inch
Input Capacitance
565pF
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
65mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-950mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
10ns
DC Rated Voltage
-20V
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Onsemi NTGS3443T1G Datasheet
Download the complete datasheet for Onsemi NTGS3443T1G to view detailed technical specifications.
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