Single P-Channel Power MOSFET featuring a -20V drain-source breakdown voltage and a continuous drain current of 2.2A. This MOSFET offers a low drain-source on-resistance of 65mΩ at a gate-source voltage of 12V. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C and is packaged in a compact TSOP. Key performance characteristics include a 30ns turn-on delay and a 31ns fall time, with a maximum power dissipation of 500mW.
PackageTSOP
Current Rating-2A
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi NTGS3443T1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | -2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 65MR |
| Element Configuration | Single |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.039inch |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Length | 0.122inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -950mV |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -20V |
| Width | 0.067inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS3443T1G Datasheet
Download the complete datasheet for Onsemi NTGS3443T1G to view detailed technical specifications.
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