
Single N-Channel Power MOSFET featuring a 20V Drain-Source Breakdown Voltage and 5.1A Continuous Drain Current. Offers a low Drain-Source On Resistance of 36mΩ at 10V Vgs. This component is housed in a TSOP package with a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with a Turn-On Delay Time of 9ns and Fall Time of 12ns.
Onsemi NTGS3446T1G technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5.1A |
| Current Rating | 5.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 36MR |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.039inch |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 0.122inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Nominal Vgs | 850mV |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 20V |
| Width | 0.067inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTGS3446T1G to view detailed technical specifications.
No datasheet is available for this part.
