Single P-channel power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 3.7A. This component offers a low drain-source on-resistance of 60mΩ at a gate-source voltage of 10V. Designed for efficient power switching, it operates within a temperature range of -55°C to 150°C and is packaged in a compact TSOP case. Key electrical characteristics include a 9ns turn-on delay time and 38ns turn-off delay time, with a maximum power dissipation of 1.25W.
PackageTSOP
Current Rating-4.7A
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Onsemi NTGS4111PT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | -4.7A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 68mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 38MR |
| Element Configuration | Single |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 630mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -30V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS4111PT1G Datasheet
Download the complete datasheet for Onsemi NTGS4111PT1G to view detailed technical specifications.
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