Single P-channel power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 2.5A. This device offers a maximum drain-source on-resistance of 111mΩ. Operating within a temperature range of -55°C to 150°C, it is housed in a compact TSOP package with dimensions of 3.1mm (L) x 1.7mm (W) x 1mm (H). Key electrical characteristics include a nominal gate-source voltage of -3V and an input capacitance of 942pF. This component is RoHS compliant and supplied on a 3000-piece tape and reel.
PackageTSOP
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Onsemi NTGS5120PT1G technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 111mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 111MR |
| Element Configuration | Single |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 942pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Nominal Vgs | -3V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 111mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8.7ns |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTGS5120PT1G Datasheet
Download the complete datasheet for Onsemi NTGS5120PT1G to view detailed technical specifications.
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