
N-channel Power MOSFET featuring SUPERFET III and FRFET technology. 650 V breakdown voltage and 75 A continuous drain current capability. Low on-resistance of 27.4 mΩ ensures efficient power switching. Housed in a TO-247 package with three terminals, operating from -55°C to 150°C.
Onsemi NTH027N65S3F-F155 technical specifications.
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