Complementary ChipFET™ Power MOSFET featuring N and P-channel FETs. Offers a 20V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 2.2A. Low on-resistance of 80mΩ (Rds On Max) at a nominal Vgs of 600mV. Packaged in a compact SMD/SMT format (3.1mm L x 1.7mm W x 1.1mm H) on a 3000-piece tape and reel. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W.
PackageSMD/SMT
Current Rating3.1A
PolarityP-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Onsemi NTHC5513T1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Nominal Vgs | 600mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHC5513T1G Datasheet
Download the complete datasheet for Onsemi NTHC5513T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
