Power MOSFET 8V 4.6A 62 mOhm Dual P-Channel ChipFET, ChipFET, 3000-REEL
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Onsemi NTHD2102PT1 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 715pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 58mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | -8V |
| RoHS | Not Compliant |
No datasheet is available for this part.
