The NTHD2102PT1G is a P-channel MOSFET with a drain to source breakdown voltage of -8V and a continuous drain current of 3.4A. It has a maximum power dissipation of 1.1W and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with lead-free and RoHS regulations. The MOSFET features a low on-resistance of 58mR and a fast switching time of 20ns.
PackageSMD/SMT
Current Rating-3.4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHD2102PT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.4A |
| Current Rating | -3.4A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 715pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 58mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | -8V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD2102PT1G Datasheet
Download the complete datasheet for Onsemi NTHD2102PT1G to view detailed technical specifications.
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