The NTHD3100CT1 is a dual P-channel and N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and a drain to source breakdown voltage of -20V. The device is available in a leadless package with a case size of 1206A-03 and a chipfet-8 configuration. It has a maximum current rating of 3.9A and a gate to source voltage of 8V. The device is not RoHS compliant and has a package quantity of 3000 units per reel.
PackageSMD/SMT
Current Rating3.9A
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Onsemi NTHD3100CT1 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 11.7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 165pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTHD3100CT1 Datasheet
Download the complete datasheet for Onsemi NTHD3100CT1 to view detailed technical specifications.
No datasheet is available for this part.