The NTHD3100CT3G is a dual P-channel N-channel MOSFET from Onsemi, featuring a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and a continuous drain current of 3.2A. The device is lead free and RoHS compliant, packaged in a tape and reel format with 10,000 units per reel. The MOSFET has a drain to source breakdown voltage of -20V and a drain to source resistance of 64mR.
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Onsemi NTHD3100CT3G technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 11.7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 165pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTHD3100CT3G to view detailed technical specifications.
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