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Technical Specifications
Onsemi NTHD3100CT3G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 11.7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 165pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD3100CT3G Datasheet
Download the complete datasheet for Onsemi NTHD3100CT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.