The NTHD3101FT1 is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of -4.4A. It has a drain to source resistance of 64mR and a power dissipation of 1.1W. The device is rated for operation up to 150°C and is packaged in a leadless, chipfet-8 package type. The NTHD3101FT1 is not RoHS compliant due to containing lead.
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Onsemi NTHD3101FT1 technical specifications.
| Continuous Drain Current (ID) | -4.4A |
| Current Rating | -4.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Fall Time | 12.4ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 680pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
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