P-Channel Power MOSFET with integrated Schottky diode, featuring a -20V drain-source breakdown voltage and a continuous drain current of 3.2A. Offers a low drain-source on-resistance of 64mΩ at a nominal Vgs of -450mV. This SMD/SMT component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W. Packaged in tape and reel, it is RoHS compliant.
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Onsemi NTHD3101FT1G technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | -3.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 64MR |
| Fall Time | 12.4ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.05mm |
| Input Capacitance | 680pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Nominal Vgs | -450mV |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 5.8ns |
| DC Rated Voltage | -20V |
| Width | 1.65mm |
| RoHS | Compliant |
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