Dual N and P-Channel Complementary Power MOSFET, 20V Vdss, featuring 3.1A continuous drain current and 5.5A current rating. This SMD/SMT packaged MOSFET offers low on-resistance of 64mR (max 45mR) and a maximum power dissipation of 1.1W. Designed for efficient switching with fast turn-on (7.2ns) and turn-off (15.7ns) times, it operates across a wide temperature range of -55°C to 150°C. Packaged in a 3000-piece tape and reel, this RoHS compliant component is ideal for power management applications.
PackageSMD/SMT
Current Rating5.5A
PolarityP-CHANNEL
Power600mW
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Technical Specifications
Onsemi NTHD3102CT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | 5.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 16.9ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 15.7ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD3102CT1G Datasheet
Download the complete datasheet for Onsemi NTHD3102CT1G to view detailed technical specifications.
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