Dual P-Channel Power MOSFET featuring a -20V drain-source voltage and 2.9A continuous drain current. Offers a low 80mΩ Rds On at 10V Vgs, with a maximum power dissipation of 1.1W. This ChipFET™ packaged transistor boasts fast switching times, including a 5.5ns turn-on delay and 12ns fall time, and operates across a wide temperature range of -55°C to 150°C. Packaged in tape and reel for high-volume applications.
Current Rating-7.3A
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHD4102PT1G technical specifications.
General
Continuous Drain Current (ID)
2.9A
Current Rating
-7.3A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
20V
Element Configuration
Dual
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
1.05mm
Input Capacitance
750pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
80mR
RoHS Compliant
Yes
Turn-Off Delay Time
32ns
Turn-On Delay Time
5.5ns
DC Rated Voltage
-20V
Weight
0.002998oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTHD4102PT1G Datasheet
Download the complete datasheet for Onsemi NTHD4102PT1G to view detailed technical specifications.
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