Dual P-Channel Power MOSFET featuring a -20V drain-source voltage and 2.9A continuous drain current. Offers a low 80mΩ Rds On at 10V Vgs, with a maximum power dissipation of 1.1W. This ChipFET™ packaged transistor boasts fast switching times, including a 5.5ns turn-on delay and 12ns fall time, and operates across a wide temperature range of -55°C to 150°C. Packaged in tape and reel for high-volume applications.
Current Rating-7.3A
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHD4102PT1G technical specifications.
General
| Continuous Drain Current (ID) | 2.9A |
| Current Rating | -7.3A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.05mm |
| Input Capacitance | 750pF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 5.5ns |
| DC Rated Voltage | -20V |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD4102PT1G Datasheet
Download the complete datasheet for Onsemi NTHD4102PT1G to view detailed technical specifications.
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