The NTHD4401PT1G is a P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.1W and a maximum drain to source voltage of 20V. The device is RoHS compliant and lead free, packaged in a 1206A-03 chipFET-8 package. The transistor has a maximum drain to source resistance of 200mR and a maximum current rating of 2.1A. It is suitable for use in surface mount applications.
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Onsemi NTHD4401PT1G technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | -2.1A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 155mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
No datasheet is available for this part.
