Dual N-Channel Power MOSFET, ChipFET™ package, featuring 30V Drain to Source Voltage (Vdss) and 2.9A Continuous Drain Current (ID). Offers a low Drain-source On Resistance (Rds On) of 85mR at 10Vgs. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.13W. Includes 5.4ns fall time and 7.8ns turn-on delay time. Packaged in Tape and Reel, 3000 units per reel.
PackageSMD/SMT
Current Rating2.9A
PolarityP-CHANNEL
Power1.13W
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Technical Specifications
Onsemi NTHD4502NT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.9A |
| Current Rating | 2.9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80MR |
| Element Configuration | Dual |
| Fall Time | 5.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 640mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.13W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.9ns |
| Turn-On Delay Time | 7.8ns |
| DC Rated Voltage | 30V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD4502NT1G Datasheet
Download the complete datasheet for Onsemi NTHD4502NT1G to view detailed technical specifications.
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