The NTHD4508NT1 is a dual N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.1A and a drain to source breakdown voltage of 20V. The device is packaged in a SMALL OUTLINE, R-XDSO-C8 package and is rated for a power dissipation of 1.13W. The MOSFET is not RoHS compliant and contains lead.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTHD4508NT1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTHD4508NT1 technical specifications.
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Element Configuration | Dual |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 20V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTHD4508NT1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
