The NTHD4508NT1 is a dual N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.1A and a drain to source breakdown voltage of 20V. The device is packaged in a SMALL OUTLINE, R-XDSO-C8 package and is rated for a power dissipation of 1.13W. The MOSFET is not RoHS compliant and contains lead.
Current Rating3.1A
PolarityN-CHANNEL
Power1.13W
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Technical Specifications
Onsemi NTHD4508NT1 technical specifications.
General
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Element Configuration | Dual |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTHD4508NT1 Datasheet
Download the complete datasheet for Onsemi NTHD4508NT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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