Dual N-Channel Power MOSFET, ChipFET package, featuring 20V drain-to-source breakdown voltage and 4.1A continuous drain current. Offers 75mΩ maximum drain-to-source resistance at a 10V gate-source voltage. Operates with a 1.2V threshold voltage and includes fast switching characteristics with 5ns turn-on delay and 15ns fall time. This RoHS compliant component has a maximum power dissipation of 2.1W and is supplied on a 3000-piece tape and reel.
PackageSMD/SMT
Current Rating3.1A
PolarityN-CHANNEL
Power1.13W
Quick Jump:
Technical Specifications
Onsemi NTHD4508NT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.13W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | 20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD4508NT1G Datasheet
Download the complete datasheet for Onsemi NTHD4508NT1G to view detailed technical specifications.
No datasheet is available for this part.