The NTHD4N02FT1 is an N-CHANNEL JFET with a drain to source breakdown voltage of 20V and a continuous drain current of 2.9A. It has a maximum power dissipation of 910mW and an operating temperature range of -55°C to 150°C. The device is packaged in a surface mount package and is not RoHS compliant. It has an input capacitance of 300pF and a fall time of 9ns.
Sign in to ask questions about the Onsemi NTHD4N02FT1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTHD4N02FT1 technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.9A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 910mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 910mW |
| Rds On Max | 80mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 20V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTHD4N02FT1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
