The NTHD4N02FT1G is a surface mount N-CHANNEL JFET with a maximum operating temperature of -55°C to 150°C and a maximum power dissipation of 910mW. It has a drain to source breakdown voltage of 20V and a drain to source resistance of 80mR. The device is RoHS compliant and lead free, packaged in a tape and reel with 3000 units per package. The NTHD4N02FT1G has a gate to source voltage of 12V and an input capacitance of 300pF, with a fall time of 9ns and a turn-off delay time of 10ns.
PackageSMD/SMT
Current Rating2.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTHD4N02FT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.9A |
| Current Rating | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 910mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 910mW |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD4N02FT1G Datasheet
Download the complete datasheet for Onsemi NTHD4N02FT1G to view detailed technical specifications.
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