Onsemi
NTHD4P02FT1
Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ, ChipFET, 3000-REEL
Current Rating-3A
PolarityP-CHANNEL
Power1.1W
Quick Jump:
Technical Specifications
Onsemi NTHD4P02FT1 technical specifications.
General
| Continuous Drain Current (ID) | -3A |
| Current Rating | -3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTHD4P02FT1 Datasheet
Download the complete datasheet for Onsemi NTHD4P02FT1 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
