The NTHD4P02FT1G is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current rating of 2.2A and a maximum power dissipation of 1.1W. The device is packaged in a SMALL OUTLINE, R-XDSO-C8 package and is lead free. It is RoHS compliant and has a drain to source breakdown voltage of -20V.
Current Rating-3A
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Onsemi NTHD4P02FT1G technical specifications.
General
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | -3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 130MR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 155mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHD4P02FT1G Datasheet
Download the complete datasheet for Onsemi NTHD4P02FT1G to view detailed technical specifications.
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