The NTHD5903T1G is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 2.2A and a drain to source breakdown voltage of -20V. The device is lead-free and RoHS compliant, packaged in a tape and reel format with a surface mount package. It has a maximum power dissipation of 1.1W and a gate to source voltage of 12V.
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Onsemi NTHD5903T1G technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.2A |
| Current Rating | -2.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 215mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 155mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | -20V |
| RoHS | Compliant |
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