The NTHS2101PT1G is a P-channel MOSFET with a continuous drain current rating of 5.4A and a drain to source breakdown voltage of -8V. It has a maximum power dissipation of 1.3W and a drain to source resistance of 34mR. The device is packaged in a CHIPFET-8 package and is lead-free and RoHS compliant. It is suitable for surface mount applications and has a nominal Vgs of -450mV. The device has a fall time of 28ns and a turn-off delay time of 73ns.
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Onsemi NTHS2101PT1G technical specifications.
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | -5.4A |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | -450mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 73ns |
| DC Rated Voltage | -8V |
| RoHS | Compliant |
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