The NTHS4101PT1 is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a continuous drain current of -6.7A. It has a drain to source resistance of 42mR and a fall time of 28ns. The device is packaged in a small outline R-XDSO-C8 package and is available in quantities of 3000. The NTHS4101PT1 is not RoHS compliant and contains lead.
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Onsemi NTHS4101PT1 technical specifications.
| Continuous Drain Current (ID) | -6.7A |
| Current Rating | -4.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 42mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Contains Lead |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTHS4101PT1 to view detailed technical specifications.
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