Single P-Channel Power MOSFET, ChipFET™ package, designed for surface mount applications. Features a -20V Drain-Source Breakdown Voltage and a continuous drain current of 4.8A. Offers a low Drain-Source On Resistance of 34mΩ at a nominal Vgs of -1.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Supplied on a 3000-piece tape and reel.
PackageSMD/SMT
Current Rating-4.8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTHS4101PT1G technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4.8A |
| Current Rating | -4.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 21MR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 2.1nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | -1.5V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTHS4101PT1G Datasheet
Download the complete datasheet for Onsemi NTHS4101PT1G to view detailed technical specifications.
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