High-side power switch featuring dual N-channel and P-channel FETs in a compact SOT-363-6 package. Offers a continuous drain current of 1.3A with a low on-resistance of 130mR (max). Operates with a gate-to-source voltage of 1V and a threshold voltage of 1V, supporting a drain-to-source breakdown voltage of -8V. This RoHS compliant component is designed for efficient power management with a maximum power dissipation of 400mW.
PackageSOT-363-6
Current Rating630mA
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NTJD1155LT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 1.3A |
| Current Rating | 630mA |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 260mR |
| Drain-source On Resistance-Max | 130mR |
| Element Configuration | Dual |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 1V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Number of Channels | 1 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD1155LT1G Datasheet
Download the complete datasheet for Onsemi NTJD1155LT1G to view detailed technical specifications.
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