High-side power switch featuring dual N-channel and P-channel FETs in a compact SOT-363-6 package. Offers a continuous drain current of 1.3A with a low on-resistance of 130mR (max). Operates with a gate-to-source voltage of 1V and a threshold voltage of 1V, supporting a drain-to-source breakdown voltage of -8V. This RoHS compliant component is designed for efficient power management with a maximum power dissipation of 400mW.
PackageSOT-363-6
Current Rating630mA
PolarityP-CHANNEL
Power400mW
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Technical Specifications
Onsemi NTJD1155LT1G technical specifications.
General
Package/Case
SOT-363-6
Continuous Drain Current (ID)
1.3A
Current Rating
630mA
Drain to Source Breakdown Voltage
-8V
Drain to Source Resistance
260mR
Drain-source On Resistance-Max
130mR
Element Configuration
Dual
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
1V
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
400mW
Number of Channels
1
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
400mW
Radiation Hardening
No
Rds On Max
175mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTJD1155LT1G Datasheet
Download the complete datasheet for Onsemi NTJD1155LT1G to view detailed technical specifications.
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