Dual N and P-Channel MOSFET, SOT-363-6 package. Features 20V Drain to Source Voltage (Vdss) and 630mA Continuous Drain Current (ID). Offers 220mR Drain-source On Resistance-Max and 46pF Input Capacitance. Operates from -55°C to 150°C with 270mW Max Power Dissipation. Supplied on a 3000-reel tape and reel.
PackageSOT-363-6
Current Rating630mA
PolarityP-CHANNEL
Power550mW
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Technical Specifications
Onsemi NTJD4105CT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 630mA |
| Current Rating | 630mA |
| Drain to Source Breakdown Voltage | -8V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 220mR |
| Element Configuration | Dual |
| Fall Time | 36ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 46pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Nominal Vgs | 920mV |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 550mW |
| Radiation Hardening | No |
| Rds On Max | 375mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 920mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 83ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD4105CT1G Datasheet
Download the complete datasheet for Onsemi NTJD4105CT1G to view detailed technical specifications.
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