Dual P-Channel MOSFET, SOT-363-6 package, features -20V Drain to Source Breakdown Voltage and -880mA Continuous Drain Current. Offers a maximum Drain-source On Resistance of 215mΩ at 260mΩ typical. Operating temperature range from -55°C to 150°C, with 272mW maximum power dissipation. Includes ESD protection and is RoHS compliant.
PackageSOT-363-6
Current Rating-880mA
PolarityP-CHANNEL
Power272mW
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Technical Specifications
Onsemi NTJD4152PT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 880mA |
| Current Rating | -880mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 215MR |
| Element Configuration | Dual |
| Fall Time | 6.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.039inch |
| Input Capacitance | 155pF |
| Lead Free | Lead Free |
| Length | 0.086inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 272mW |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 272mW |
| Radiation Hardening | No |
| Rds On Max | 260mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 5.8ns |
| DC Rated Voltage | -20V |
| Width | 0.053inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD4152PT1G Datasheet
Download the complete datasheet for Onsemi NTJD4152PT1G to view detailed technical specifications.
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