Dual N-Channel Small Signal MOSFET, featuring 60V drain-source breakdown voltage and 295mA continuous drain current. Offers 1.6Ω maximum drain-source on-resistance. This component operates within a -55°C to 150°C temperature range and is packaged in an SC-88/SC70-6/SOT-363 6-lead package on a 3000-reel tape and reel. Includes ESD protection and is RoHS compliant.
PackageSC
PolarityN-CHANNEL
Power250W
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Technical Specifications
Onsemi NTJD5121NT1G technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 295mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Drain-source On Resistance-Max | 1.6R |
| Element Configuration | Dual |
| Fall Time | 32ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 26pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 266mW |
| Nominal Vgs | 1.7V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 22ns |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJD5121NT1G Datasheet
Download the complete datasheet for Onsemi NTJD5121NT1G to view detailed technical specifications.
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