Dual N-Channel JFET with ESD protection, featuring 60V drain-to-source breakdown voltage and 295mA continuous drain current. This component offers a low 1.6 Ohm drain-to-source resistance and a 1.7V threshold voltage. Operating across a wide temperature range of -55°C to 150°C, it is housed in a compact SOT-363 package. Key electrical characteristics include 26pF input capacitance and fast switching times with a 22ns turn-on delay.
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Onsemi NTJD5121NT2G technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 295mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Element Configuration | Dual |
| Fall Time | 32ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 26pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 22ns |
| Width | 1.35mm |
| RoHS | Compliant |
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