
Dual N-Channel JFET with ESD protection, featuring 60V drain-to-source breakdown voltage and 295mA continuous drain current. This component offers a low 1.6 Ohm drain-to-source resistance and a 1.7V threshold voltage. Operating across a wide temperature range of -55°C to 150°C, it is housed in a compact SOT-363 package. Key electrical characteristics include 26pF input capacitance and fast switching times with a 22ns turn-on delay.
Onsemi NTJD5121NT2G technical specifications.
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