Single P-Channel Trench Power MOSFET, ideal for power switching applications. Features a -12V Drain to Source Breakdown Voltage and a continuous drain current of 2.7A, with a maximum drain-source on-resistance of 45mΩ. This device offers fast switching speeds with a turn-on delay of 0.86ns and a fall time of 1.5ns. Housed in a compact SOT-363-6 package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOT-363-6
Current Rating-3.3A
PolarityP-CHANNEL
Power625mW
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Technical Specifications
Onsemi NTJS3151PT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 2.7A |
| Current Rating | -3.3A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 133mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 45mR |
| Element Configuration | Single |
| Fall Time | 1.5ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 3.5ns |
| Turn-On Delay Time | 0.86ns |
| DC Rated Voltage | -12V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJS3151PT1G Datasheet
Download the complete datasheet for Onsemi NTJS3151PT1G to view detailed technical specifications.
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