P-channel MOSFET, 20V drain-source breakdown voltage, 3.3A continuous drain current. Features 180mΩ drain-source on-resistance at 10V Vgs, 47mΩ max drain-source on-resistance. Operates with a gate-source voltage up to 12V and a threshold voltage of -400mV. Packaged in a 6-pin SOT-363-6 (SC-88) tape and reel, with a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C.
PackageSOT-363-6
Current Rating-3.3A
PolarityP-CHANNEL
Power1W
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Technical Specifications
Onsemi NTJS4151PT1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | -3.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 47MR |
| Element Configuration | Single |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 2.7ns |
| Turn-On Delay Time | 0.85ns |
| DC Rated Voltage | -20V |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTJS4151PT1G Datasheet
Download the complete datasheet for Onsemi NTJS4151PT1G to view detailed technical specifications.
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