The NTJS4405NT4 is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 630mW and a maximum drain to source breakdown voltage of 25V. The device is packaged in a small outline R-PDSO-G6 package and is rated for a continuous drain current of 1A. It has an input capacitance of 60pF and a gate to source voltage of 8V. The NTJS4405NT4 is not RoHS compliant.
PackageSC
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTJS4405NT4 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 60pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 630mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 630mW |
| Rds On Max | 350mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi NTJS4405NT4 Datasheet
Download the complete datasheet for Onsemi NTJS4405NT4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.