Single P-Channel Power MOSFET, SOT-723 package, featuring a -20V Drain to Source Breakdown Voltage and 780mA Continuous Drain Current. Offers a low Drain-Source On Resistance of 380mΩ (max) at a 6V Gate to Source Voltage. Includes ESD protection with a -1.2V Threshold Voltage and fast switching times, with a Turn-On Delay Time of 9ns and Fall Time of 5.8ns. Maximum Power Dissipation is 550mW, operating within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageSOT-723-3
PolarityP-CHANNEL
Power310mW
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Technical Specifications
Onsemi NTK3139PT1G technical specifications.
General
| Package/Case | SOT-723-3 |
| Continuous Drain Current (ID) | 780mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 380mR |
| Dual Supply Voltage | -20V |
| Element Configuration | Single |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.55mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 1.25mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 550mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 32.7ns |
| Turn-On Delay Time | 9ns |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTK3139PT1G Datasheet
Download the complete datasheet for Onsemi NTK3139PT1G to view detailed technical specifications.
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