Onsemi
NTK3139PT5G
Single P−Channel Power MOSFET with ESD Protection -20V -780mA 480mΩ, SOT-723 3 LEAD, 8000-REEL
PackageSOT-723-3
PolarityP-CHANNEL
Power310mW
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Technical Specifications
Onsemi NTK3139PT5G technical specifications.
General
| Package/Case | SOT-723-3 |
| Continuous Drain Current (ID) | 660mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 380mR |
| Element Configuration | Single |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 310mW |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32.7ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTK3139PT5G Datasheet
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