The NTLGD3502NT1G is a dual N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.74W and a continuous drain current of 3.6A. The device is packaged in a lead-free DFN-6 package and is RoHS compliant. The MOSFET has a drain to source breakdown voltage of 20V and a drain to source resistance of 60mR.
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Onsemi NTLGD3502NT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 17.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.74W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.74W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8.6ns |
| RoHS | Compliant |
No datasheet is available for this part.
